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Kada, Wataru; Yokoyama, Akihito; Koka, Masashi; Sato, Takahiro; Kamiya, Tomihiro
no journal, ,
An new ion micro-beam imaging technique was developed by using Ion-Beam-Induced Luminescence (IBIL) analysis system. IBIL photons are emitted from the sample during ion-beam-induced excitation process of outer shell electrons of the target atoms and molecules. Thus, monochromatic IBIL images should contain information of the structure or chemical composition of the target that micro-PIXE analysis could not achieve. Several images were experimentally obtained from several sample of particulate aerosol or biological cell samples by using 3 MeV proton micro-beam. The IBIL images of the samples had successfully visualized with target size around 10 microns. Monochromatic IBIL imaging were also obtainable from various target samples by the developed IBIL analysis system for the realization of the proposed chemical-state imaging.
1 surface at 300 K enhanced by translational kinetic energy of O
Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
For the oxidation of Ge(001)-21 surface at 300K, oxidation states in the condition of E
= 0.03 eV and E=2.23 eV were observed by using synchrotron radiation XPS. At the dose of 1.110
molecules cm
s
, the intensity of O 1s for E = 2.23 eV is much larger than that for E=0.03 eV and the chemical shift components of Ge 3d also increase. We find that the increment of oxygen amount also is caused by the increase of E for the oxidation of Ge(001)-21 surface.
Tsubouchi, Masaaki; Yokoyama, Atsushi; Nagai, Masaya*; Oshima, Yasuhiro*
no journal, ,
no abstracts in English
matrix irradiated with swift heavy ionsSasase, Masato*; Okayasu, Satoru; Ishikawa, Norito; Yamamoto, Hiroyuki
no journal, ,
Shape transformation of Au nanoparticles in SiO matrix has been performed by swift heavy-ion irradiation.
Ogawa, Shuichi*; Yamada, Takatoshi*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Kaga, Toshihide*; Hozumi, Hideaki*; Hasegawa, Masataka*; Teraoka, Yuden; Takakuwa, Yuji*
no journal, ,
no abstracts in English
Inomata, Shuya*; Handa, Hiroyuki*; Abe, Shunsuke*; Takahashi, Ryota*; Imaizumi, Kei*; Fukidome, Hirokazu*; Teraoka, Yuden; Yoshigoe, Akitaka; Kotsugi, Masato*; Okochi, Takuo*; et al.
no journal, ,
no abstracts in English
Yamaguchi, Kenji; Hamamoto, Satoshi*; Hojo, Kiichi
no journal, ,
no abstracts in English
-polyethrene phosphors by irradiation of fast neutronsSakasai, Kaoru; To, Kentaro; Nakamura, Tatsuya; Takakura, Kosuke; Konno, Chikara; Iwamoto, Yosuke
no journal, ,
no abstracts in English
Imaizumi, Mitsuru*; Morioka, Chiharu*; Sumita, Taishi*; Oshima, Takeshi; Okuda, Shuichi*
no journal, ,
no abstracts in English
Tagawa, Masahito*; Yokota, Kumiko*; Kishida, Kazuhiro*; Furuyama, Yuichi*; Tode, Mayumi; Yoshigoe, Akitaka; Teraoka, Yuden; Minton, T. K.*
no journal, ,
no abstracts in English
Ono, Shinya*; Inoue, Kei*; Momose, Tatsuya*; Kanemura, Rui*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*
no journal, ,
no abstracts in English
Hu, W.; Takahashi, Masamitsu; Kozu, Miwa*; Suzuki, Hidetoshi*; Sasaki, Takuo*
no journal, ,
Yabuuchi, Atsushi; Maekawa, Masaki; Kawasuso, Atsuo; Hasegawa, Shigehiko*; Zhou, Y.-K.*; Asahi, Hajime*
no journal, ,
In the MBE growth of dilute magnetic semiconductors, the low-temperature growth has been attempted to suppress the precipitation of secondary phases. A current problem is a control of vacancy-type defects. Thus in this study, effects of growth conditions on formation of vacancy-type defects in MBE-grown GaN were investigated by positron annihilation spectroscopy. GaN buffer layers with the thickness of 30 nm were grown on sapphire substrates at 700
C. Furthermore, GaN-cap (20 nm)/GaCrN (200 nm) layers were grown at different temperatures (540C, 300C and room temperature). For these samples, positron annihilation 
-ray peak intensity measurements were performed. As a result, the -ray peak intensity increased with decreasing the growth temperature. This result shows that the concentration or size of vacancy-type defects contained in the GaCrN layer increases with decreasing growth temperature.
Yamazaki, Tatsuya; Yamamoto, Shunya; Asaoka, Hidehito; Taguchi, Tomitsugu; Shamoto, Shinichi
no journal, ,
no abstracts in English
Kozu, Miwa*; Hu, W.; Takahashi, Masamitsu
no journal, ,
Recently, low-dimensional structures of semiconductors have attracted much attention because of their possible novel functions originating from quantum size effects. It has been shown that free-standing semiconductor nanowires can be grown on the (111) surface of silicon and the (111)B surface of III-V semiconductors by the vapor-liquid-solid growth technique in which metal particles, such as Au, Ni and Fe, serve as catalysts. Semiconductor nanowires of GaAs and InAs are known to adopt the wurtzite structure rather than than zincblende structure which is the normal structure in their bulk crystals. In the present study, we have performed in situ X-ray diffraction study of GaAs nanowire growth on GaAs(111)B with Au catalyst. Experiments were carried out using a psic-type X-ray diffractometer integrated with an MBE chamber at BL11XU. With increasing deposition amount of GaAs, the structure of GaAs nanowires was found to transform from the zincblende to the wurtzite.
Matsumoto, Yoshihiro; Entani, Shiro; Otomo, Manabu; Avramov, P.; Naramoto, Hiroshi*; Amemiya, Kenta*; Sakai, Seiji
no journal, ,
no abstracts in English
Otomo, Manabu; Tsuchida, Yuya*; Sakai, Seiji; Hasegawa, Tetsuya*; Shimada, Toshihiro*
no journal, ,
no abstracts in English
Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Isoya, Junichi*
no journal, ,
no abstracts in English
Matsumoto, Yoshihiro; Otomo, Manabu; Avramov, P.; Naramoto, Hiroshi*; Sakai, Seiji; Entani, Shiro
no journal, ,
no abstracts in English
Ito, Takuto*; Deki, Manato; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi
no journal, ,
no abstracts in English